These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.

These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the RoHS standard.

ROUM Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO Inside the package, this device combines high current rating and low volume to enhance both reliability and power density of the application. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.

60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor

Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO Inside the package, this device combines high current rating and low volume to enhance both reliability and power density of the application. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.